2sa2040/2sC5707 no.6913-1/5 applications ? dc-dc converter, relay drivers, lamp drivers, motor drivers, strobes. features ? adoption of fbet, mbit process. ? large current capacitance. ? low collector-to-emitter saturation voltage. ? high-speed switching. ? high allowable power dissipation. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn6913 2sa2040 / 2sC5707 high current switching applications package dimensions unit : mm 2045b [2sa2040 / 2sC5707] 30101 ts im ta-3233 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. pnp / npn epitaxial planar silicon transistors package dimensions unit : mm 2044b [2sa2040 / 2sC5707] 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp 5.0 6.5 0.85 0.7 0.6 1.5 5.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 4 2.3 2.3 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp-fa 6.5 2.3 0.5 1.5 5.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6 12 4 3
2sa2040/2sC5707 no.6913-2/5 + + 50 input output v r r b r l v cc =25v 100 f 470 f v be = --5v pw=20 s i b1 i b2 d.c. 1% 20i b1 = --20i b2 = i c =2.5a for pnp, the polarity is reversed. specifications note*( ) : 2sa2040 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--50)80 v collector-to-emitter voltage v ces (--50)80 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)8 a collector current (pulse) i cp (--)11 a base current i b (--)2 a collector dissipation p c 1.0 w tc=25 c15w junction temperature tj 150 c storage temperature tstg - 55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)40v, i e =0 (--)0.1 m a emitter cutoff current i ebo v eb =(--)4v, i c =0 (--)0.1 m a dc current gain h fe v ce =(--)2v, i c =(--)500ma 200 560 gain-bandwidth product f t v ce =(--)10v, i c =(--)500ma (290)330 mhz output capacitance cob v cb =(--)10v, f=1mhz (50)28 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)3.5a, i b =(--)175ma (--230)160 (--390)240 mv i c =(--)2a, i b =(--)40ma (--240)110 (--400)170 mv base-to-emitter saturation voltage v be (sat) ic=(--)2a, ib=(--)40ma (--)0.83 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 m a, i e =0 (--50)80 v collector-to-emitter breakdown voltage v (br)ces i c =(--)100 m a, r be = 80 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 m a, i c =0 (--)6 v turn-on time t on see specified test circuit. (40)30 ns storage time t stg see specified test circuit. (225)420 ns fall time t f see specified test circuit. 25 ns swicthing time test circuit
2sa2040/2sC5707 no.6913-3/5 7 6 5 4 3 2 1 0.4 0.8 1.2 1.6 2.0 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i c -- v be 2sC5707 v ce =2v ta=75 c 25 c --25 c ta=75 c 25 c --25 c 2sa2040 v ce = --2v -- 8 -- 7 -- 6 -- 5 -- 4 -- 3 -- 2 -- 1 0 0 --0.2 --0.4 --0.6 --0.8 --1.4 --1.0 --1.2 i c -- v be 0 0 i c -- v ce i b =0 -- 7 -- 6 -- 5 -- 4 -- 3 -- 2 -- 1 0 0 --0.4 --0.8 --1.2 --1.6 --2.0 i c -- v ce --10ma --20ma --30ma --40ma --50ma --60ma --70ma --80ma --90ma --100ma 10ma 20ma 30ma 40ma 50ma 60ma 70ma 80ma 90ma 100ma i b =0 it00206 it00208 it00207 it00209 2sC5707 2sa2040 collector-to-emitter voltage, v ce -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a --1000 --100 2 3 5 7 2 3 5 7 2 3 5 7 --1.0 --10 --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 v ce (sat) -- i c ta=75 c 25 c --25 c it00212 2sa2040 i c / i b =20 1000 100 2 3 5 7 2 3 5 7 10 2 3 5 7 1.0 0.01 0.1 23 57 23 57 23 57 1.0 10 v ce (sat) -- i c ta=75 c 25 c --25 c it00214 2sC5707 i c / i b =20 ta=75 c 25 c --25 c 1000 100 7 5 3 2 7 5 3 2 10 --0.01 3 25 --10 --0.1 73 257 3 257 --1.0 h fe -- i c 2sa2040 v ce = --2v it00210 1000 100 7 5 3 2 7 5 3 2 10 0.01 3 25 10 0.1 73 257 3 257 1.0 h fe -- i c ta=75 c --25 c 25 c 2sC5707 v ce =2v it00211 collector current, i c -- a dc current gain, h fe collector current, i c -- a dc current gain, h fe collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv
2sa2040/2sC5707 no.6913-4/5 --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 --10000 7 5 3 2 7 5 3 2 --1000 7 5 3 2 --10 --100 v ce (sat) -- i c it00213 ta=75 c 25 c --25 c 2sa2040 i c / i b =50 0.01 0.1 23 57 23 57 23 57 1.0 10 10000 1000 7 5 3 2 7 5 3 2 7 5 3 2 100 10 v ce (sat) -- i c it00215 ta=75 c 25 c --25 c 2sC5707 i c / i b =50 10000 1000 100 0.01 0.1 1.0 10 ta= --25 c 25 c 75 c 7 5 3 2 7 5 3 2 23 57 23 57 23 57 2sC5707 i c / i b =50 v be (sat) -- i c it00217 v be (sat) -- i c --10000 --1000 --100 --0.01 --0.1 --1.0 --10 ta= --25 c 25 c 75 c 7 5 3 2 7 5 3 2 23 57 23 57 23 57 2sa2040 i c / i b =50 it00216 collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- mv collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- mv f t -- i c 7 3 100 10 2 5 1000 7 5 3 2 --0.01 257 73 257 3257 3 --0.1 --1.0 --10 5 it00220 2sa2040 v ce = --10v f t -- i c 7 3 100 10 2 5 1000 7 5 3 2 0.01 257 73 257 3257 3 0.1 1.0 10 5 it00221 2sC5707 v ce =10v cob -- v cb 5 3 2 7 5 3 2 2 7 5 3 100 10 0.1 23 3 3 57 7 57 1.0 2 10 2 55 it00219 2sC5707 f=1mhz cob -- v cb 5 3 2 7 5 3 2 2 7 5 3 100 10 5 --0.1 23 3 77 5237 5 --1.0 --10 25 it00218 2sa2040 f=1mhz collector current, i c -- a collector current, i c -- a gain-bandwidth product, f t -- mhz gain-bandwidth product, f t -- mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector-to-base voltage, v cb -- v output capacitance, cob -- pf
2sa2040/2sC5707 no.6913-5/5 0 1.2 1.0 0.8 0.6 0.4 0.2 20 060 40 80 100 140 120 160 p c -- ta it02972 a s o 10 1.0 0.01 2 7 5 3 2 7 5 3 2 0.1 7 5 3 2 1.0 0.1 10 100 25 37 25 37 25 37 it02971 100ms 10ms 1ms 500 s 100 s 18 0 16 14 15 8 10 6 4 2 12 20 060 40 80 100 140 120 160 p c -- tc it02973 2sa2040 / 2sC5707 2sa2040 / 2sC5707 dc operation (ta=25 c) dc operation (tc=25 c) ambient temperature, ta -- c collector dissipation, p c -- w case temperature, tc -- c collector dissipation, p c -- w collector current, i c -- a collector-to-emitter voltage, v ce -- v 2sa2040 / 2sC5707 tc=25 c single puls for pnp, the minus sign(--)is omitted no heat sink i cp =11a i c =8a specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of march, 2001. specifications and information herein are subject to change without notice. ps
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